1/4 STPS15H100CB february 2002 - ed : 1a high voltage power schottky rectifier ? dual center tab schottky rectifier suited for switch mode power supply and high frequency dc to dc converters. package in dpak, this device is intended for use in high frequency inverters. description n negligible switching losses n low leakage current n good trade off between leakage current and for- ward voltage drop n low thermal resistance n avalanche rated features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 100 v i f(rms) rms forward current 10 a i f(av) average forward current tc = 135c d = 0.5 per diode 7.5 a per device 15 i fsm surge non repetitive forward current tp = 10 ms sinusoidal 75 a i rrm peak repetitive reverse current tp=2 m s square f=1khz 1a t stg storage temperature range -65 to+175 c tj maximum operating junction temperature * 175 c dv/dt critical rate of rise reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) i f(av) 2 x 7.5 a v rrm 100 v tj (max) 175 c v f (max) 0.67 v main products characteristics a2 a1 k dpak a1 k a2 *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink
STPS15H100CB 2/4 symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25c v r =v rrm 3ma tj = 125c 1.3 4 ma v f * forward voltage drop tj = 25 ci f = 7.5 a 0.8 v tj = 125c i f = 7.5 a 0.62 0.67 tj=25 ci f =12a 0.85 tj = 125c i f =12a 0.68 0.73 tj=25 ci f =15a 0.89 tj = 125c i f =15a 0.71 0.76 pulse test : * tp = 380 m s, d <2% to evaluate the conduction losses use the following equation : p=0.58xi f(av) + 0.012 i f 2 (rms) static electrical characteristics (per diode) symbol parameter value unit r th(j-c) junction to case per diode total 4 2.4 c/w r th(c) coupling 0.7 when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) thermal resistances 0 1 2 3 4 5 6 7 0123456789 if(av)(a) pf(av)(w) d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 t d =tp/t tp fig. 1: conduction losses versus average current. 0 1 2 3 4 5 6 7 8 9 0 25 50 75 100 125 150 175 tamb(c) rth(j-a)=rth(j-c) rth(j-a)=70c/w if(av)(a) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5).
STPS15H100CB 3/4 0 10 20 30 40 50 60 70 80 90 100 1.e-03 1.e-02 1.e-01 1.e+00 t(s) tc=25c tc=75c tc=125c im(a) i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values). 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 0 102030405060708090100 vr(v) tj=150c tj=125c tj=25c tj=100c tj=75c tj=50c ir(ma) fig. 5: reverse leakage current versus reverse voltage applied (typical values). 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 vfm(v) tj=25c (maximum values) tj=125c (maximum values) tj=125c (maximum values) tj=125c (typical values) tj=125c (typical values) ifm(a) fig. 7: forward voltage drop versus forward current. 0 10 20 30 40 50 60 70 80 90 100 02468101214161820 s(cm2) rth(j-a)(c/w) fig. 8: thermal resistance junction to ambient versus copper surface under tab (epoxy printed board fr4, cu = 35m). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 tp(s) zth(j-c)/rth(j-c) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 0.0 0.1 1.0 1 10 100 vr(v) f=1mhz vosc=30mv tj=25c c(nf) fig. 6: junction capacitance versus reverse voltage applied (typical values).
4/4 STPS15H100CB ref. dimensions millimeters inches min. max min. max. a 2.20 2.40 0.086 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.212 c 0.45 0.60 0.017 0.023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251 0.259 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.397 l2 0.80 typ. 0.031 typ. l4 0.60 1.00 0.023 0.039 v2 0 8 0 8 package mechanical data dpak information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com ordering type marking package weight base qty delivery mode STPS15H100CB s15h100 dpak 0.30 g 75 tube STPS15H100CB-tr s15h100 dpak 0.30 g 2500 tape & reel n epoxy meets ul94,v0 6.7 6.7 3 3 1.6 1.6 2.3 2.3 footprint (dimensions in mm)
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